Madatov, R. S.Mehrabova, M. A.Abbasov, F. R.Suleymanov, S. S.2019-02-082019-02-082006Madatov, R. S. ... [ve arkadaşları]. (2006). Rapid detectors for γ quanta on the base of Au-Si. The Fourth Eurasian Conference on Nuclear Science and Its Application : Presentations, (s. 236-238). 31 October-3 November 2006. Baku, Azerbaijan.http://kurumsalarsiv.tenmak.gov.tr/handle/20.500.12878/1065The distributions of the electron-hole pairs generated by light and values of coefficient of carriers collecting, collected under action of the enclosed displacement has been calculated. The photoconductivity has been calculated depending on absorption a and voltage of displacement U. The sensitivity of structure Si-Au is more than for Si. At y irradiation there is a generation of electron- hole pairs on structure Au-Si, thus speed of accumulation of charges on contact depends on intensity of electric field.enginfo:eu-repo/semantics/openAccessRapid detectorsHızlı dedektörlerγ quantaAu-SiRapid detectors for γ quanta on the base of Au-SiconferenceObject236238