Batalov, R. J.Bavazitov, R. M.Khaibullin, I. B.2018-08-102018-08-102000-10Batalov, R. J., Bavazitov, R. M., Bavazitov, R. M., (2000). Pulsed ion beam synthesis of β-FeSi2 layers on Si implanted with Fe+. I. Eurasia Conference on Nuclear Science and Its Application, Presentations, Vol 2, (s. 1051-1055). 23-27 October 2000. İzmir, Turkey.http://kurumsalarsiv.tenmak.gov.tr/handle/20.500.12878/837I. Avrasya Nükleer Bilimler ve Uygulamaları Konferansı : 23-27 Ekim 2000. İzmir, Türkiye.Formation of (3-FeSi2 layers on Si was performed by high-dose Fe+ implantation into Si (100) at 300 K followed by pulsed ion beam treatment (PIBT) of nanosecond duration on implanted layers. It is shown that PIBT leads to the formation of a mixture of two phases (FeSi and β- FeSi2) with a strained state of the silicide crystal lattice. Subsequent short-time thermal annealing at 800°C for 20 min results in the decrease of lattice strains and in the complete transformation of the FeSi phase into the β-FeSi2 phase with the production of a highly textured layer with [110] orientation. The results of the optical absorption measurements indicate the formation of a direct band gap structure with the optical gap Eg~0.83 eV.enginfo:eu-repo/semantics/openAccessPulsed ion beam synthesisDarbeli iyon ışın senteziβ-FeSi2Fe+SiconferenceObject10511055