Rapid detectors for γ quanta on the base of Au-Si
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Date
2006
Journal Title
Journal ISSN
Volume Title
Publisher
Azerbaijan National Academy of Sciences Institute of Radiation Problems ve Turkish Atomic Energy Authority
Abstract
The distributions of the electron-hole pairs generated by light and values of coefficient of carriers collecting,
collected under action of the enclosed displacement has been calculated. The photoconductivity has been
calculated depending on absorption a and voltage of displacement U. The sensitivity of structure Si-Au is
more than for Si. At y irradiation there is a generation of electron- hole pairs on structure Au-Si, thus speed
of accumulation of charges on contact depends on intensity of electric field.
Description
Keywords
Rapid detectors, Hızlı dedektörler, γ quanta, Au-Si
Citation
Madatov, R. S. ... [ve arkadaşları]. (2006). Rapid detectors for γ quanta on the base of Au-Si. The Fourth Eurasian Conference on Nuclear Science and Its Application : Presentations, (s. 236-238). 31 October-3 November 2006. Baku, Azerbaijan.