Influence of γ - irradiation on photoconductivity and photoluminescence of monocrystals Gas(1-X)Se(X): E(R)
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Date
2006
Journal Title
Journal ISSN
Volume Title
Publisher
Azerbaijan National Academy of Sciences Institute of Radiation Problems ve Turkish Atomic Energy Authority
Abstract
The influence of γ-irradiation with the energy E= 1.3 MeV and dose Dγ= 10÷100 krad on photoelectric and photoluminescent properties of monociystals GaS1-xSex: Er (x= 0.25) was investigated. On basis of the analysis of experimental data it was established at doping rare earth element erbium N= 10(18)sm(-)3 by impurities and γ-irradiation photosensitivity and intensity of photoluminescent irradiation in the investigated samples increase. The model of defect formation was suggested, which explains the observed characteristics.
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Keywords
γ - irradiation, γ - ışınımı, Photoconductivity, Foto iletkenlik, Photoluminescence, Fotolüminesansı, Monocrystals, Monokristaller, Gamma rays, Gama ışınları, Gas(1-X)Se(X), E(R)
Citation
Madatov, R. S., Tagiyev, T. B. ve Abbasova, T. M. (2006). Influence of γ - irradiation on photoconductivity and photoluminescence of monocrystals Gas(1-X)Se(X): E(R). The Fourth Eurasian Conference on Nuclear Science and Its Application : Presentations, (s. 404-407). 31 October-3 November 2006. Baku, Azerbaijan.