High-field transport properties of aluminum-embedded aluminum oxide films
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Date
1973
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
T.A.E.C., Çekmece Nuclear Research And Training Center
Abstract
Current-voltage characteristics of aluminum-embedded aluminum oxide thin films with Al or Au
electrodes, between 150-1000 Â in thickness, prepared by thermic evaporation of pure aluminum in
partial air pressure are studied. I - V characteristics of these films showed metallic conductivity,
switching, and memory effects different than those observed in amorphous materials, and
metal-oxide-metal diode characteristics as the amount of metallic aluminum within the oxide is
decreased in respective samples. The switching and memory effects are found to be independent of
oxide thickness and electrode material.
Description
TENMAK D.N.. 10337
Keywords
Aluminium, Alüminyum, Aluminium oxide films, Alüminyum oksit filmler
Citation
Birey, H. (1973). High-field transport properties of aluminum-embedded aluminum oxide films. İstanbul : T.A.E.C., Çekmece Nuclear Research And Training Center.