Browsing by All Authors "Madatov, R. S."
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Item A study of carrier collection in GaS - based x-ray and γ-ray detectors by photoelectric method(National Academy of Science of Kyrgyzstan, Turkish Atomic Energy Authority, 2008) Madatov, R. S.; Mehrabova, M. A.; Hasanov, N. H.; Bölüm YokItem Anisotropy of electro-conductivity in γ-irradiated TlInS2 with hexagonal modification(National Academy of Science of Kyrgyzstan, Turkish Atomic Energy Authority, 2008) Madatov, R. S.; Najafov, A. I.; Mammadov, V. S.; Mammadov, M. A.; Bölüm YokItem Anisotropy of electroconductivity of lamellar electron-irradiated monocrystal GaS0.85Se0.15(National Academy of Science of Kyrgyzstan, Turkish Atomic Energy Authority, 2008) Madatov, R. S.; Tagiyev, T. B.; Abbasova, T. M.; Abbasov, F. P.; Bölüm YokItem Effect of reversible light conversion of conductivity in Ge samples irradiated by accelerated electrons with energy 3 MeV(Turkish Atomic Energy Authority, 2000-10) Gasumov, G. M.; Madatov, R. S.; Kabulov, I. A.; Aliyev, A. I.; Bölüm YokItem Electronic structure of defect semiconductors A3B6(National Academy of Science of Kyrgyzstan, Turkish Atomic Energy Authority, 2008) Madatov, R. S.; Mehrabova, M. A.; Bölüm YokItem Influence of accelerated electron rays on photoelctric properties of AlGaAs-GaAs solar cells(National Academy of Science of Kyrgyzstan, Turkish Atomic Energy Authority, 2008) Madatov, R. S.; Allahverdiyev, A. M.; Sujudi, G. M.; Mustafayev, Y. M.; Huseynov, N. I.; Bölüm YokItem Influence of γ - irradiation on photoconductivity and photoluminescence of monocrystals Gas(1-X)Se(X): E(R)(Azerbaijan National Academy of Sciences Institute of Radiation Problems ve Turkish Atomic Energy Authority, 2006) Madatov, R. S.; Tagiyev, T. B.; Abbasova, T. M.; Bölüm YokThe influence of γ-irradiation with the energy E= 1.3 MeV and dose Dγ= 10÷100 krad on photoelectric and photoluminescent properties of monociystals GaS1-xSex: Er (x= 0.25) was investigated. On basis of the analysis of experimental data it was established at doping rare earth element erbium N= 10(18)sm(-)3 by impurities and γ-irradiation photosensitivity and intensity of photoluminescent irradiation in the investigated samples increase. The model of defect formation was suggested, which explains the observed characteristics.Item Neutron transmutation doping of silicon(National Academy of Science of Kyrgyzstan, Turkish Atomic Energy Authority, 2008) Garibov, A. A.; Madatov, R. S.; Ahmadov, F. I.; Bölüm YokItem Rapid detectors for γ quanta on the base of Au-Si(Azerbaijan National Academy of Sciences Institute of Radiation Problems ve Turkish Atomic Energy Authority, 2006) Madatov, R. S.; Mehrabova, M. A.; Abbasov, F. R.; Suleymanov, S. S.; Bölüm YokThe distributions of the electron-hole pairs generated by light and values of coefficient of carriers collecting, collected under action of the enclosed displacement has been calculated. The photoconductivity has been calculated depending on absorption a and voltage of displacement U. The sensitivity of structure Si-Au is more than for Si. At y irradiation there is a generation of electron- hole pairs on structure Au-Si, thus speed of accumulation of charges on contact depends on intensity of electric field.