Browsing by All Authors "Mehrabova, M. A."
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Item A study of carrier collection in GaS - based x-ray and γ-ray detectors by photoelectric method(National Academy of Science of Kyrgyzstan, Turkish Atomic Energy Authority, 2008) Madatov, R. S.; Mehrabova, M. A.; Hasanov, N. H.; Bölüm YokItem Application of ionising radiation for sterilisation of preparations on the basis of snake venom(National Academy of Science of Kyrgyzstan, Turkish Atomic Energy Authority, 2008) Topchiyeva, Sh. A.; Mehrabova, M. A.; Abiyev, H. A.; Babayev, E. T.; Allahverdiyeva, L.; Heydarov, R. E.; Allahverdiyeva, R.; Bölüm YokItem Electronic structure of defect semiconductors A3B6(National Academy of Science of Kyrgyzstan, Turkish Atomic Energy Authority, 2008) Madatov, R. S.; Mehrabova, M. A.; Bölüm YokItem Influence of electromagnetic field on entomopathogenic nematode heterorhabditis bacteriophora(National Academy of Science of Kyrgyzstan, Turkish Atomic Energy Authority, 2008) Rubtsova, L. Y.; Topchiyeva, Sh. A.; Mehrabova, M. A.; Hasanov, N. H.; Bölüm YokItem Influence of electromagnetic radiation on venom of vipera lebetina obtuse(National Academy of Science of Kyrgyzstan, Turkish Atomic Energy Authority, 2008) Topchiyeva, Sh. A.; Mehrabova, M. A.; Abiyev, H. A.; Babayev, E. T.; Allahverdiyeva, L.; Heydarov, R. E.; Allahverdiyeva, R.; Bölüm YokItem Rapid detectors for γ quanta on the base of Au-Si(Azerbaijan National Academy of Sciences Institute of Radiation Problems ve Turkish Atomic Energy Authority, 2006) Madatov, R. S.; Mehrabova, M. A.; Abbasov, F. R.; Suleymanov, S. S.; Bölüm YokThe distributions of the electron-hole pairs generated by light and values of coefficient of carriers collecting, collected under action of the enclosed displacement has been calculated. The photoconductivity has been calculated depending on absorption a and voltage of displacement U. The sensitivity of structure Si-Au is more than for Si. At y irradiation there is a generation of electron- hole pairs on structure Au-Si, thus speed of accumulation of charges on contact depends on intensity of electric field.