Browsing by All Authors "Suleymanov, S. S."

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    Rapid detectors for γ quanta on the base of Au-Si
    (Azerbaijan National Academy of Sciences Institute of Radiation Problems ve Turkish Atomic Energy Authority, 2006) Madatov, R. S.; Mehrabova, M. A.; Abbasov, F. R.; Suleymanov, S. S.; Bölüm Yok
    The distributions of the electron-hole pairs generated by light and values of coefficient of carriers collecting, collected under action of the enclosed displacement has been calculated. The photoconductivity has been calculated depending on absorption a and voltage of displacement U. The sensitivity of structure Si-Au is more than for Si. At y irradiation there is a generation of electron- hole pairs on structure Au-Si, thus speed of accumulation of charges on contact depends on intensity of electric field.