Influence of radioactive irradiation to the thin films Ge/Ge1-xSix

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k80347.pdf (2.14 MB)
Date
2006
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Publisher
Azerbaijan National Academy of Sciences Institute of Radiation Problems ve Turkish Atomic Energy Authority
Abstract
At modern stage of scientific and technological revolution special emphasis is placed on the advancement of those fields of science the achievements of which define the wide prospect of technological development. These fields of science include semiconductor physics, one of the main tasks is search, study and modification of crystal properties with high values of applied-physics characteristics in order to develop new materials promising different technological applications.
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Keywords
Radioactive irradiation, Radyoaktif ışınlama, Thin films, İnce film, Ge, Ge1-xSix
Citation
Abbasov, Sh. M. ... [ve arkadaşları]. (2006). Influence of radioactive irradiation to the thin films Ge/Ge1-xSix. The Fourth Eurasian Conference on Nuclear Science and Its Application : Presentations, (s. 399-403). 31 October-3 November 2006. Baku, Azerbaijan.
URI
http://kurumsalarsiv.tenmak.gov.tr/handle/20.500.12878/1097
Collections
IV. Eurasian conference on nuclear science and its application : presentations, 31 October- 3 November 2006. Baku, Azerbaijan.