Rapid detectors for γ quanta on the base of Au-Si

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dc.contributor.authorMadatov, R. S.
dc.contributor.authorMehrabova, M. A.
dc.contributor.authorAbbasov, F. R.
dc.contributor.authorSuleymanov, S. S.
dc.contributor.departmentBölüm Yoktr_TR
dc.date.accessioned2019-02-08T07:29:23Z
dc.date.available2019-02-08T07:29:23Z
dc.date.issued2006
dc.description.abstractThe distributions of the electron-hole pairs generated by light and values of coefficient of carriers collecting, collected under action of the enclosed displacement has been calculated. The photoconductivity has been calculated depending on absorption a and voltage of displacement U. The sensitivity of structure Si-Au is more than for Si. At y irradiation there is a generation of electron- hole pairs on structure Au-Si, thus speed of accumulation of charges on contact depends on intensity of electric field.tr_TR
dc.identifier.citationMadatov, R. S. ... [ve arkadaşları]. (2006). Rapid detectors for γ quanta on the base of Au-Si. The Fourth Eurasian Conference on Nuclear Science and Its Application : Presentations, (s. 236-238). 31 October-3 November 2006. Baku, Azerbaijan.tr_TR
dc.identifier.endpage238tr_TR
dc.identifier.startpage236tr_TR
dc.identifier.urihttp://kurumsalarsiv.tenmak.gov.tr/handle/20.500.12878/1065
dc.language.isoengtr_TR
dc.publisherAzerbaijan National Academy of Sciences Institute of Radiation Problems ve Turkish Atomic Energy Authoritytr_TR
dc.relation.journalThe Fourth Eurasian Conference on Nuclear Science and Its Application : Presentations, 31 October-3 November 2006. Baku, Azerbaijan.tr_TR
dc.rightsinfo:eu-repo/semantics/openAccesstr_TR
dc.subjectRapid detectorstr_TR
dc.subjectHızlı dedektörlertr_TR
dc.subjectγ quantatr_TR
dc.subjectAu-Sitr_TR
dc.titleRapid detectors for γ quanta on the base of Au-Sitr_TR
dc.typeconferenceObjecttr_TR
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IV. Eurasian conference on nuclear science and its application : presentations, 31 October- 3 November 2006. Baku, Azerbaijan.