High-field transport properties of aluminum-embedded aluminum oxide films

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dc.contributor.authorBirey, Hülya
dc.contributor.departmentTAEK-ÇNAEMtr_TR
dc.date.accessioned2017-09-29T07:16:02Z
dc.date.available2017-09-29T07:16:02Z
dc.date.issued1973
dc.descriptionTENMAK D.N.. 10337tr_TR
dc.description.abstractCurrent-voltage characteristics of aluminum-embedded aluminum oxide thin films with Al or Au electrodes, between 150-1000 Â in thickness, prepared by thermic evaporation of pure aluminum in partial air pressure are studied. I - V characteristics of these films showed metallic conductivity, switching, and memory effects different than those observed in amorphous materials, and metal-oxide-metal diode characteristics as the amount of metallic aluminum within the oxide is decreased in respective samples. The switching and memory effects are found to be independent of oxide thickness and electrode material.tr_TR
dc.identifier.citationBirey, H. (1973). High-field transport properties of aluminum-embedded aluminum oxide films. İstanbul : T.A.E.C., Çekmece Nuclear Research And Training Center.tr_TR
dc.identifier.urihttp://kurumsalarsiv.tenmak.gov.tr/handle/20.500.12878/594
dc.language.isoengtr_TR
dc.publisherT.A.E.C., Çekmece Nuclear Research And Training Centertr_TR
dc.relation.ispartofseriesT.A.E.C., Çekmece Nuclear Research And Training Center;ÇNAEM - R - 112
dc.rightsinfo:eu-repo/semantics/openAccesstr_TR
dc.subjectAluminiumtr_TR
dc.subjectAlüminyumtr_TR
dc.subjectAluminium oxide filmstr_TR
dc.subjectAlüminyum oksit filmlertr_TR
dc.titleHigh-field transport properties of aluminum-embedded aluminum oxide filmstr_TR
dc.typereporttr_TR
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