Hopping conductivity on relaxor ferroelectrics TIInS2<V> exposed gamma irradiation

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Date
2006
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Publisher
Azerbaijan National Academy of Sciences Institute of Radiation Problems ve Turkish Atomic Energy Authority
Abstract
The influence of γ-radiation on relaxing properties of TlInS2<V> compound has been studied. It has been established, that the Fogel-Fulcher temperature Tʃshifts to the side of low temperatures in this compound, and Bernce temperature Td shifts to the side of high temperatures. In the result, the temperature interval of existence of relaxing state becomes wider on ~40K. Temperature dependences of the electrical conductivity δac(T) of the TlInS2<V> crystal prior to and after gamma irradiation with a dose of 400 Mrad are investigated.
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Keywords
Gamma irradiation, Gama ışınlaması, Relaxor ferroelectrics, Relaksör ferroelektrikler, Hopping conductivity, İletkenliği atlama, TIInS2<V>
Citation
Sardarli, R. M. ... [ve arkadaşları]. (2006). Hopping conductivity on relaxor ferroelectrics TIInS2<V> exposed gamma irradiation. The Fourth Eurasian Conference on Nuclear Science and Its Application : Presentations, (s. 409-414). 31 October-3 November 2006. Baku, Azerbaijan.
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http://kurumsalarsiv.tenmak.gov.tr/handle/20.500.12878/1100
Collections
IV. Eurasian conference on nuclear science and its application : presentations, 31 October- 3 November 2006. Baku, Azerbaijan.