X-ray irradiation effects on the interface of polypyrrole/p-Si structure

Simple item page
dc.contributor.authorBiber, M.
dc.contributor.authorSağlam, M.
dc.contributor.authorErzeneoğlu, S.
dc.contributor.authorAteş, A.
dc.contributor.authorDurak, R.
dc.contributor.authorTürüt, A.
dc.contributor.departmentBölüm Yoktr_TR
dc.date.accessioned2019-02-13T13:15:21Z
dc.date.available2019-02-13T13:15:21Z
dc.date.issued2006
dc.description.abstractThe samples were prepared using mirror cleaned and polished (as received from the manufacturer) p-type Si wafers with (100) orientation and 15-20 Q cm resistivity and 300-400 pm thickness. The ohmic contact was made by evaporating A1 on the back of the substrate, followed by a temperature treatment at 600 °C for 3 min in a N2 atmosphere. The native oxide on the front surface of p-Si was removed in a HF:H20 (1:15) soluüon and finally the wafer was rinsed in deionized water before polymerization was carried out. The ohmic contact made and the edges of the p-Si substrate used as an anode were carefully covered by wax so that the polished and cleaned front side of the sample was exposed to the electrolyte by mounüng it in an experimental set-up employed for anodizaüon. A Pt plate was used as the cathode. Anodization process was carried out under constant current conditions of I = 1mA. The polypyrrole/p-Si diode was fabricated by an electrolyte being held at a constant temperature of 55 °C that was composed of 0.40 M pyrrole and 0.1 M tetrabutylammonium tetrafluoroborate. The electrolyte solution was prepared in a propylene carbonate solvent (Merck). The Polypyrrole/p-Si/Al structure has demonstrated rectifying behavior by the current-voltage cuives studied at room temperature. The sample was exposed to x-ray irradiation up to 50 keV at constant doses in order to determine effect of x-ray radiation on interface between polypyrrole and Si semiconductor. The parameters of the structure such as barrier height, ideality factor, series resistance and interface state density are determined how to change with the irradiation. The interface state density distribution curves of device was obtained from forward bias current-voltage (I-V) characteristic.tr_TR
dc.identifier.citationBiber, M. ... [ve arkadaşları]. (2006). X-ray irradiation effects on the interface of polypyrrole/p-Si structure. The Fourth Eurasian Conference on Nuclear Science and Its Application : Presentations, (s. 395-398). 31 October-3 November 2006. Baku, Azerbaijan.tr_TR
dc.identifier.endpage398tr_TR
dc.identifier.startpage395tr_TR
dc.identifier.urihttp://kurumsalarsiv.tenmak.gov.tr/handle/20.500.12878/1094
dc.language.isoengtr_TR
dc.publisherAzerbaijan National Academy of Sciences Institute of Radiation Problems ve Turkish Atomic Energy Authoritytr_TR
dc.relation.journalThe Fourth Eurasian Conference on Nuclear Science and Its Application : Presentations, 31 October-3 November 2006. Baku, Azerbaijan.tr_TR
dc.rightsinfo:eu-repo/semantics/openAccesstr_TR
dc.subjectX-raystr_TR
dc.subjectX-ışınlarıtr_TR
dc.subjectIrradiation effectstr_TR
dc.subjectIşınlama etkileritr_TR
dc.subjectPolypyrrole/p-Si structuretr_TR
dc.subjectPoliprol/p-Si yapısıtr_TR
dc.titleX-ray irradiation effects on the interface of polypyrrole/p-Si structuretr_TR
dc.typeconferenceObjecttr_TR
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
k80346.pdf
Size:
456.54 KB
Format:
Adobe Portable Document Format
Download
License bundle
Now showing 1 - 1 of 1
No Thumbnail Available
Name:
license.txt
Size:
1.42 KB
Format:
Unknown data format
Description:
Download
Collections
IV. Eurasian conference on nuclear science and its application : presentations, 31 October- 3 November 2006. Baku, Azerbaijan.