(T.A.E.C., Çekmece Nuclear Research And Training Center, 1973) Birey, Hülya; TAEK-ÇNAEM
Current-voltage characteristics of aluminum-embedded aluminum oxide thin films with Al or Au
electrodes, between 150-1000 Â in thickness, prepared by thermic evaporation of pure aluminum in
partial air pressure are studied. I - V characteristics of these films showed metallic conductivity,
switching, and memory effects different than those observed in amorphous materials, and
metal-oxide-metal diode characteristics as the amount of metallic aluminum within the oxide is
decreased in respective samples. The switching and memory effects are found to be independent of
oxide thickness and electrode material.