Browsing IV. Eurasian conference on nuclear science and its application : presentations, 31 October- 3 November 2006. Baku, Azerbaijan. by All Authors "Abbasov, F. R."
(Azerbaijan National Academy of Sciences Institute of Radiation Problems ve Turkish Atomic Energy Authority, 2006) Madatov, R. S.; Mehrabova, M. A.; Abbasov, F. R.; Suleymanov, S. S.; Bölüm Yok
The distributions of the electron-hole pairs generated by light and values of coefficient of carriers collecting,
collected under action of the enclosed displacement has been calculated. The photoconductivity has been
calculated depending on absorption a and voltage of displacement U. The sensitivity of structure Si-Au is
more than for Si. At y irradiation there is a generation of electron- hole pairs on structure Au-Si, thus speed
of accumulation of charges on contact depends on intensity of electric field.