Browsing by All Authors "Bavazitov, R. M."

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    Pulsed ion beam synthesis of β-FeSi2 layers on Si implanted with Fe+
    (Turkish Atomic Energy Authority, 2000-10) Batalov, R. J.; Bavazitov, R. M.; Khaibullin, I. B.; Bölüm Yok
    Formation of (3-FeSi2 layers on Si was performed by high-dose Fe+ implantation into Si (100) at 300 K followed by pulsed ion beam treatment (PIBT) of nanosecond duration on implanted layers. It is shown that PIBT leads to the formation of a mixture of two phases (FeSi and β- FeSi2) with a strained state of the silicide crystal lattice. Subsequent short-time thermal annealing at 800°C for 20 min results in the decrease of lattice strains and in the complete transformation of the FeSi phase into the β-FeSi2 phase with the production of a highly textured layer with [110] orientation. The results of the optical absorption measurements indicate the formation of a direct band gap structure with the optical gap Eg~0.83 eV.