Pulsed ion beam synthesis of β-FeSi2 layers on Si implanted with Fe+
Loading...
Date
2000-10
Journal Title
Journal ISSN
Volume Title
Publisher
Turkish Atomic Energy Authority
Abstract
Formation of (3-FeSi2 layers on Si was performed by high-dose Fe+ implantation into Si (100) at
300 K followed by pulsed ion beam treatment (PIBT) of nanosecond duration on implanted
layers. It is shown that PIBT leads to the formation of a mixture of two phases (FeSi and β-
FeSi2) with a strained state of the silicide crystal lattice. Subsequent short-time thermal
annealing at 800°C for 20 min results in the decrease of lattice strains and in the complete
transformation of the FeSi phase into the β-FeSi2 phase with the production of a highly textured
layer with [110] orientation. The results of the optical absorption measurements indicate the
formation of a direct band gap structure with the optical gap Eg~0.83 eV.
Description
I. Avrasya Nükleer Bilimler ve Uygulamaları Konferansı : 23-27 Ekim 2000. İzmir, Türkiye.
Keywords
Pulsed ion beam synthesis, Darbeli iyon ışın sentezi, β-FeSi2, Fe+, Si
Citation
Batalov, R. J., Bavazitov, R. M., Bavazitov, R. M., (2000). Pulsed ion beam synthesis of β-FeSi2 layers on Si implanted with Fe+. I. Eurasia Conference on Nuclear Science and Its Application, Presentations, Vol 2, (s. 1051-1055). 23-27 October 2000. İzmir, Turkey.