Open-circuit voltage of MIS silicon solar cells
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Date
1983-12
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Publisher
Turkish Atomic Energy Authority
Abstract
Bu çalışmada, n-tipi silikon kullanılarak yapılan MIS Silikon güneş pillerinin açık devre voltajı incelendi, n kalite faktörü ve eϕBn Schottky engeli gibi çeşitli parametrelerin, açık devre voltajı üzerine etkisi araştırıldı. Neticede, açık devre voltajının yüksek olması için n-değerinin de yüksek olması şartının gerekmediği görüldü.
Open circuit voltage Voc of MIS Silicon Solar cells fabricated on n-type silicon has been investigated. The effect of different parameters such as quality factor n and Schottky Barrier height eϕBn on Voc are discussed. It is concluded that a high n-value is not necessary to obtain a high open circuit voltage Voc.
Open circuit voltage Voc of MIS Silicon Solar cells fabricated on n-type silicon has been investigated. The effect of different parameters such as quality factor n and Schottky Barrier height eϕBn on Voc are discussed. It is concluded that a high n-value is not necessary to obtain a high open circuit voltage Voc.
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Keywords
MIS silicon solar cells, MIS silikon güneş pilleri, Open-circuit voltage, Açık devre voltajı
Citation
Aladlı, F., Birgül, G. ve Özdemir, S. (1983). Open-circuit voltage of MIS silicon solar cells. Turkish Journal of Nuclear Sciences, 10(2), 85-93.