Lithium - drifted silicon p-i-n junction dedectors
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Date
1976
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Publisher
Turkish Atomic Energy Commission, Ankara Nuclear Research and Traning Center
Abstract
p-i-n birleşim parçacık dedektörleri iyon sürükleme tekniği ile yapılmış ve 2,5-3 mm den daha derin duyar bölgeler elde edilmiştir. Ölçülen ve hesaplanan sürükleme hızları arasında iyi bir uyuşum gözlenmiştir. Oda sıcaklığında, 500 KeV ve MeV'Iik elektronlar için, dedektörlerin ayırma gücü (yarı maksimumda tam genişlik, FWHM) 25 KeV olarak ve 661KeV'lik gama ışınları için ise 19 KeV olarak bulunmuştur. Dedektörler sıvı azot sıcaklığına kadar soğutulduğunda, 1 MeV’lik elektronlar için ayırma gücünün 20 KeV’e kadar düştüğü görülmüştür.
Ion drift techniques heve been used to produce p-i-n junction particle detectors by drifting lithium in p-type silicon. The depletion depths up to and greater than 2.5-3 mm were obtained. The agreement between calculated and measured drift rates was found to be satisfactory. At the room temperature, resolutions (FWHM) down to 25 keV were obtained for the electrons at energies of 500 KeV and 1 MeV. The resolution for gamma rays was 19 KeV at 661 KeV. Resolutions down to 20 KeV were observed for electrons 1 MeV when the detectors were cooled down to liqulid nitrogen temperature.
Ion drift techniques heve been used to produce p-i-n junction particle detectors by drifting lithium in p-type silicon. The depletion depths up to and greater than 2.5-3 mm were obtained. The agreement between calculated and measured drift rates was found to be satisfactory. At the room temperature, resolutions (FWHM) down to 25 keV were obtained for the electrons at energies of 500 KeV and 1 MeV. The resolution for gamma rays was 19 KeV at 661 KeV. Resolutions down to 20 KeV were observed for electrons 1 MeV when the detectors were cooled down to liqulid nitrogen temperature.
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Keywords
Lithium, Lityum, Drifted silicon, Sürüklenmiş silikon, P-i-n junction dedectors, P-i-n bağlantı dedektörleri
Citation
Birgül, G. ... [ve arkadaşları]. (1976). Lithium - drifted silicon p-i-n junction dedectors. Technical Journal, 3(3), 90-102.