Metallic aluminum particle concentration in aluminum oxide thin films

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dc.contributor.authorBirey, H.
dc.contributor.departmentTAEK-ÇNAEMtr_TR
dc.date.accessioned2017-09-29T06:45:42Z
dc.date.available2017-09-29T06:45:42Z
dc.date.issued1974
dc.descriptionTENMAK D.N.. 10325tr_TR
dc.description.abstractTwo different methods based on (a) the tunneling junction model and (b) the optical model are used to determine the metallic aluminum particle concentration in aluminum oxide thin films prepared by thermal evaporation of pure aluminum under appropriate vacuum conditions. The concentration determined from these two models agree with each other at high concentrations and show considerable deviation at low concentrations.tr_TR
dc.identifier.citationBirey, H. (1974). Metallic aluminum particle concentration in aluminum oxide thin films. İstanbul : T.A.E.C., Çekmece Nuclear Research And Training Center.tr_TR
dc.identifier.urihttp://kurumsalarsiv.tenmak.gov.tr/handle/20.500.12878/592
dc.language.isoengtr_TR
dc.publisherT.A.E.C., Çekmece Nuclear Research And Training Centertr_TR
dc.relation.ispartofseriesT.A.E.C., Çekmece Nuclear Research And Training Center;ÇNAEM - R - 135
dc.rightsinfo:eu-repo/semantics/openAccesstr_TR
dc.subjectThin filmstr_TR
dc.subjectİnce filmlertr_TR
dc.subjectAluminum oxidetr_TR
dc.subjectAlüminyum oksittr_TR
dc.subjectAluminatr_TR
dc.subjectAlüminyumtr_TR
dc.titleMetallic aluminum particle concentration in aluminum oxide thin filmstr_TR
dc.typereporttr_TR
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