Channeling of low energy protons in Si <111> crystal
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Date
1982-08
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Publisher
Turkish Atomic Energy Commission
Abstract
(111) düzlemine paralel kesilmiş silikon tek-kristalinde, Rutherford geri saçılma tekniği kullanılarak, kanallarıma olayı incelendi. 325, 395 ve 400 keV enerjili protonlar için kritik açılar ölçüldü ve deneysel olarak bulunan parametreler Lindhard'm basit süreklilik modeli hesaplamalarıyla karşılaştırıldı .
Channeling effect on a silicon single-crystal wafer cut along parallel to its (111) plane was investigated by using Rutherford Back-scattering Technique. Critical angles were measured for 325, 395 and 400 keV incoming proton energies. Experimentally measured parameters were compared to Lindhard's simple continuoum model calculations.
Channeling effect on a silicon single-crystal wafer cut along parallel to its (111) plane was investigated by using Rutherford Back-scattering Technique. Critical angles were measured for 325, 395 and 400 keV incoming proton energies. Experimentally measured parameters were compared to Lindhard's simple continuoum model calculations.
Description
Keywords
Si <111> crystal, Si <111> kristali, Channeling, Kanallama, Low energy protons, Düşük enerjili protonlar
Citation
Bölükbaşı, O. ve Sanalan, Y. (1982). Channeling of low energy protons in Si <111> crystal. Turkish Journal of Nuclear Sciences, 9(2), 52-63.