Channeling of low energy protons in Si <111> crystal
| dc.contributor.author | Bölükbaşı, O. | |
| dc.contributor.author | Sanalan, Yalçın | |
| dc.contributor.department | Bölüm Yok | tr_TR |
| dc.date.accessioned | 2022-06-14T12:32:53Z | |
| dc.date.available | 2022-06-14T12:32:53Z | |
| dc.date.issued | 1982-08 | |
| dc.description.abstract | (111) düzlemine paralel kesilmiş silikon tek-kristalinde, Rutherford geri saçılma tekniği kullanılarak, kanallarıma olayı incelendi. 325, 395 ve 400 keV enerjili protonlar için kritik açılar ölçüldü ve deneysel olarak bulunan parametreler Lindhard'm basit süreklilik modeli hesaplamalarıyla karşılaştırıldı . | tr_TR |
| dc.description.abstract | Channeling effect on a silicon single-crystal wafer cut along parallel to its (111) plane was investigated by using Rutherford Back-scattering Technique. Critical angles were measured for 325, 395 and 400 keV incoming proton energies. Experimentally measured parameters were compared to Lindhard's simple continuoum model calculations. | tr_TR |
| dc.identifier.citation | Bölükbaşı, O. ve Sanalan, Y. (1982). Channeling of low energy protons in Si <111> crystal. Turkish Journal of Nuclear Sciences, 9(2), 52-63. | tr_TR |
| dc.identifier.endpage | 63 | tr_TR |
| dc.identifier.issue | 2 | tr_TR |
| dc.identifier.startpage | 52 | tr_TR |
| dc.identifier.uri | http://kurumsalarsiv.tenmak.gov.tr/handle/20.500.12878/1878 | |
| dc.identifier.volume | 9 | tr_TR |
| dc.language.iso | eng | tr_TR |
| dc.publisher | Turkish Atomic Energy Commission | tr_TR |
| dc.relation.journal | Turkish Journal of Nuclear Sciences | tr_TR |
| dc.rights | info:eu-repo/semantics/openAccess | tr_TR |
| dc.subject | Si <111> crystal | tr_TR |
| dc.subject | Si <111> kristali | tr_TR |
| dc.subject | Channeling | tr_TR |
| dc.subject | Kanallama | tr_TR |
| dc.subject | Low energy protons | tr_TR |
| dc.subject | Düşük enerjili protonlar | tr_TR |
| dc.title | Channeling of low energy protons in Si <111> crystal | tr_TR |
| dc.type | article | tr_TR |