Radiation defect creation in silicon doped by transition metals

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Date
2006
Authors
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Journal ISSN
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Publisher
Azerbaijan National Academy of Sciences Institute of Radiation Problems ve Turkish Atomic Energy Authority
Abstract
Description
Keywords
Radiation defect creation, Radyasyon hatası oluşumu, Transition metals, Geçiş metalleri, Silicon doped, Silikon katkılı
Citation
Makhkamov, Sh., Tursunov, N. A. ve Karimov, M. (2006). Radiation defect creation in silicon doped by transition metals. The Fourth Eurasian Conference on Nuclear Science and Its Application : Presentations, (s. 388-394). 31 October-3 November 2006. Baku, Azerbaijan.
URI
http://kurumsalarsiv.tenmak.gov.tr/handle/20.500.12878/1093
Collections
IV. Eurasian conference on nuclear science and its application : presentations, 31 October- 3 November 2006. Baku, Azerbaijan.