Radiation defect creation in silicon doped by transition metals

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dc.contributor.authorMakhkamov, Sh.
dc.contributor.authorTursunov, N. A.
dc.contributor.authorKarimov, M.
dc.contributor.departmentBölüm Yoktr_TR
dc.date.accessioned2019-02-13T13:06:17Z
dc.date.available2019-02-13T13:06:17Z
dc.date.issued2006
dc.identifier.citationMakhkamov, Sh., Tursunov, N. A. ve Karimov, M. (2006). Radiation defect creation in silicon doped by transition metals. The Fourth Eurasian Conference on Nuclear Science and Its Application : Presentations, (s. 388-394). 31 October-3 November 2006. Baku, Azerbaijan.tr_TR
dc.identifier.endpage394tr_TR
dc.identifier.startpage388tr_TR
dc.identifier.urihttp://kurumsalarsiv.tenmak.gov.tr/handle/20.500.12878/1093
dc.language.isoengtr_TR
dc.publisherAzerbaijan National Academy of Sciences Institute of Radiation Problems ve Turkish Atomic Energy Authoritytr_TR
dc.relation.journalThe Fourth Eurasian Conference on Nuclear Science and Its Application : Presentations, 31 October-3 November 2006. Baku, Azerbaijan.tr_TR
dc.rightsinfo:eu-repo/semantics/openAccesstr_TR
dc.subjectRadiation defect creationtr_TR
dc.subjectRadyasyon hatası oluşumutr_TR
dc.subjectTransition metalstr_TR
dc.subjectGeçiş metalleritr_TR
dc.subjectSilicon dopedtr_TR
dc.subjectSilikon katkılıtr_TR
dc.titleRadiation defect creation in silicon doped by transition metalstr_TR
dc.typeconferenceObjecttr_TR
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IV. Eurasian conference on nuclear science and its application : presentations, 31 October- 3 November 2006. Baku, Azerbaijan.