C-V characteristics of mosom structures
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Date
1974-06
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Turkish Atomic Energy Commission, Ankara Nuclear Research Center
Abstract
Bir silisyum kristalinin iki yüzeyi üzerinde karşılıklı iki MOS kapasitesi inşa edilerek bir MOSOM yapısı elde edildi. Yapının C -V karakteristiği ölçüldü ve kompüter programı ile elde edilen teorik eğriyle karşılaştırıldı.
Two MOS capacitors were built on the opposite surfaces of a silicon chip to produce an MOSOM structure. The C -V characteristic of the MOSOM was measured and compared with the theoretical curve obtained by a computer programme.
Two MOS capacitors were built on the opposite surfaces of a silicon chip to produce an MOSOM structure. The C -V characteristic of the MOSOM was measured and compared with the theoretical curve obtained by a computer programme.
Description
Keywords
Mosom structures, Mosom yapıları, C-V characteristics, C-V özellikleri
Citation
Ellialtıoğlu, M. R., Sencer, O. ve Büget, U. (1974). C-V characteristics of mosom structures. Technical Journal, 1(3), 121-124.