C-V characteristics of mosom structures

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dc.contributor.authorEllialtıoğlu, M. R.
dc.contributor.authorSencer, O.
dc.contributor.authorBüget, Uğur
dc.contributor.authorID0000-0001-6100-5727tr_TR
dc.contributor.departmentAEK-Ankara Nükleer Araştırma Merkezitr_TR
dc.date.accessioned2021-09-02T07:52:34Z
dc.date.available2021-09-02T07:52:34Z
dc.date.issued1974-06
dc.description.abstractBir silisyum kristalinin iki yüzeyi üzerinde karşılıklı iki MOS kapasitesi inşa edilerek bir MOSOM yapısı elde edildi. Yapının C -V karakteristiği ölçüldü ve kompüter programı ile elde edilen teorik eğriyle karşılaştırıldı.tr_TR
dc.description.abstractTwo MOS capacitors were built on the opposite surfaces of a silicon chip to produce an MOSOM structure. The C -V characteristic of the MOSOM was measured and compared with the theoretical curve obtained by a computer programme.tr_TR
dc.identifier.citationEllialtıoğlu, M. R., Sencer, O. ve Büget, U. (1974). C-V characteristics of mosom structures. Technical Journal, 1(3), 121-124.tr_TR
dc.identifier.endpage124tr_TR
dc.identifier.issue3tr_TR
dc.identifier.startpage121tr_TR
dc.identifier.urihttp://kurumsalarsiv.tenmak.gov.tr/handle/20.500.12878/1735
dc.identifier.volume1tr_TR
dc.language.isoengtr_TR
dc.publisherTurkish Atomic Energy Commission, Ankara Nuclear Research Centertr_TR
dc.relation.journalTechnical Journaltr_TR
dc.rightsinfo:eu-repo/semantics/openAccesstr_TR
dc.subjectMosom structurestr_TR
dc.subjectMosom yapılarıtr_TR
dc.subjectC-V characteristicstr_TR
dc.subjectC-V özellikleritr_TR
dc.titleC-V characteristics of mosom structurestr_TR
dc.typearticletr_TR
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Cilt 1 - Sayı: 3 (1974)