Effects of X-ray radiation to the surface - state density in a metal-oxide-semiconductor structure
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Date
1974-02
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Publisher
Turkish Atomic Energy Commission, Ankara Nuclear Research Center
Abstract
5 ohm - cm rezistiviteli p-tipi bir silisyum dilimi üzerinde 2160 A kalınlığında Si02 tabakası büyütülerek Au - SiO2 - Si - Al MOS yapısı inşa edildi. 4.5 MHz’de yapının C-V karakteristiği ölçüldü ve yüzey enerji durumları yoğunluğu 1.4x10(11) cm-2 olarak hesaplandı. Yüzey enerji durumları yoğunluğunun X-ışını ile değişimi incelendi.
A 2160 AO thick Si02 layer was grown on a p - type silicon wafer of resistivity 5 ohm - cm and an Au - SiO2 - Si - Al MOS structure was built. The C - V characteristics of the structure were measured at 4.5 MHz, and the surface - state density was calculated to be about 1.4x10(11) cm-2. Change in the surface - state density with X-ray irradiation was investigated.
A 2160 AO thick Si02 layer was grown on a p - type silicon wafer of resistivity 5 ohm - cm and an Au - SiO2 - Si - Al MOS structure was built. The C - V characteristics of the structure were measured at 4.5 MHz, and the surface - state density was calculated to be about 1.4x10(11) cm-2. Change in the surface - state density with X-ray irradiation was investigated.
Description
Keywords
X-ray radiation, X-ışını radyasyonunu, Metal-oxide-semiconductor structure, Metal oksit-yarı iletken yapı, State density, Durum yoğunluğu, Surface, Yüzey
Citation
Ellialtıoğlu, M. R. ve Sencer, O. (1974). Effects of X-ray radiation to the surface - state density in a metal-oxide-semiconductor structure. Technical Journal, 1(1), 23-25.