Effects of X-ray radiation to the surface - state density in a metal-oxide-semiconductor structure

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dc.contributor.authorEllialtıoğlu, M. R.
dc.contributor.authorSencer, O.
dc.contributor.authorID0000-0001-6100-5727tr_TR
dc.contributor.departmentAEK-Ankara Nükleer Araştırma Merkezitr_TR
dc.date.accessioned2021-08-31T08:36:39Z
dc.date.available2021-08-31T08:36:39Z
dc.date.issued1974-02
dc.description.abstract5 ohm - cm rezistiviteli p-tipi bir silisyum dilimi üzerinde 2160 A kalınlığında Si02 tabakası büyütülerek Au - SiO2 - Si - Al MOS yapısı inşa edildi. 4.5 MHz’de yapının C-V karakteristiği ölçüldü ve yüzey enerji durumları yoğunluğu 1.4x10(11) cm-2 olarak hesaplandı. Yüzey enerji durumları yoğunluğunun X-ışını ile değişimi incelendi.tr_TR
dc.description.abstractA 2160 AO thick Si02 layer was grown on a p - type silicon wafer of resistivity 5 ohm - cm and an Au - SiO2 - Si - Al MOS structure was built. The C - V characteristics of the structure were measured at 4.5 MHz, and the surface - state density was calculated to be about 1.4x10(11) cm-2. Change in the surface - state density with X-ray irradiation was investigated.tr_TR
dc.identifier.citationEllialtıoğlu, M. R. ve Sencer, O. (1974). Effects of X-ray radiation to the surface - state density in a metal-oxide-semiconductor structure. Technical Journal, 1(1), 23-25.tr_TR
dc.identifier.endpage25tr_TR
dc.identifier.issue1tr_TR
dc.identifier.startpage23tr_TR
dc.identifier.urihttp://kurumsalarsiv.tenmak.gov.tr/handle/20.500.12878/1724
dc.identifier.volume1tr_TR
dc.language.isoengtr_TR
dc.publisherTurkish Atomic Energy Commission, Ankara Nuclear Research Centertr_TR
dc.relation.journalTechnical Journaltr_TR
dc.rightsinfo:eu-repo/semantics/openAccesstr_TR
dc.subjectX-ray radiationtr_TR
dc.subjectX-ışını radyasyonunutr_TR
dc.subjectMetal-oxide-semiconductor structuretr_TR
dc.subjectMetal oksit-yarı iletken yapıtr_TR
dc.subjectState densitytr_TR
dc.subjectDurum yoğunluğutr_TR
dc.subjectSurfacetr_TR
dc.subjectYüzeytr_TR
dc.titleEffects of X-ray radiation to the surface - state density in a metal-oxide-semiconductor structuretr_TR
dc.typearticletr_TR
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