Pulsed ion beam synthesis of β-FeSi2 layers on Si implanted with Fe+

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dc.contributor.authorBatalov, R. J.
dc.contributor.authorBavazitov, R. M.
dc.contributor.authorKhaibullin, I. B.
dc.contributor.departmentBölüm Yoktr_TR
dc.date.accessioned2018-08-10T07:28:32Z
dc.date.available2018-08-10T07:28:32Z
dc.date.issued2000-10
dc.descriptionI. Avrasya Nükleer Bilimler ve Uygulamaları Konferansı : 23-27 Ekim 2000. İzmir, Türkiye.tr_TR
dc.description.abstractFormation of (3-FeSi2 layers on Si was performed by high-dose Fe+ implantation into Si (100) at 300 K followed by pulsed ion beam treatment (PIBT) of nanosecond duration on implanted layers. It is shown that PIBT leads to the formation of a mixture of two phases (FeSi and β- FeSi2) with a strained state of the silicide crystal lattice. Subsequent short-time thermal annealing at 800°C for 20 min results in the decrease of lattice strains and in the complete transformation of the FeSi phase into the β-FeSi2 phase with the production of a highly textured layer with [110] orientation. The results of the optical absorption measurements indicate the formation of a direct band gap structure with the optical gap Eg~0.83 eV.tr_TR
dc.identifier.citationBatalov, R. J., Bavazitov, R. M., Bavazitov, R. M., (2000). Pulsed ion beam synthesis of β-FeSi2 layers on Si implanted with Fe+. I. Eurasia Conference on Nuclear Science and Its Application, Presentations, Vol 2, (s. 1051-1055). 23-27 October 2000. İzmir, Turkey.tr_TR
dc.identifier.endpage1055tr_TR
dc.identifier.startpage1051tr_TR
dc.identifier.urihttp://kurumsalarsiv.tenmak.gov.tr/handle/20.500.12878/837
dc.language.isoengtr_TR
dc.publisherTurkish Atomic Energy Authoritytr_TR
dc.relation.journalI. Eurasia Conference on Nuclear Science and Its Application : Presentations, 23-27 October 2000. İzmir, Turkey.tr_TR
dc.rightsinfo:eu-repo/semantics/openAccesstr_TR
dc.subjectPulsed ion beam synthesistr_TR
dc.subjectDarbeli iyon ışın sentezitr_TR
dc.subjectβ-FeSi2tr_TR
dc.subjectFe+tr_TR
dc.subjectSitr_TR
dc.titlePulsed ion beam synthesis of β-FeSi2 layers on Si implanted with Fe+tr_TR
dc.typeconferenceObjecttr_TR
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I. Eurasia conference on nuclear science and its application : presentations, 23-27 October 2000. İzmir, Turkey.